KOSEN SEMI Process Technology

Advanced Wet Processing Equipment for SiC, GaN, and III-V Semiconductors

KOSEN SEMI delivers high-yield, zero-contamination single-wafer cleaning systems and wet bench platforms engineered for aggressive acid and base chemical environments.

Achieve superior device yields with high-selectivity etching, rapid surface residue stripping, and 200 nm-class particle removal, with optimized capability down to 100 nm tailored for wide-bandgap compound semiconductors.

100 nm under optimized conditions Particle Control Limit
+300% Corrosion-Resistant Lifespan
99.5% Substrate Yield Guarantee
Yield Optimization Metrics

Quantifiable Micro-Level Cleanliness for Compound Semiconductors

KOSEN SEMI delivers precision wet processing systems engineered to advance SiC process control and maximize GaN substrate yield across high-volume fabs.

99.8%

Metal Contamination Removal

Wafer surface metal impurity elimination down to sub-ppb levels, validated via ICP-MS analysis.

±1.5%

Etching Uniformity Control

Tight process window precision optimized for ultra-thin SiC and GaN epitaxial films.

Zero

Chemical Delivery Downtime

Continuous, corrosion-resistant chemical delivery architecture ensuring stable, uninterrupted fab operations.

100+

Fab Deployments

Proven mass production line implementations in commercial SiC and GaN manufacturing facilities.

Precision Chemical Processing Engineered for SiC & GaN Manufacturing

Compound semiconductor manufacturing demands micro-level cleanliness and uncompromising chemical control. KOSEN SEMI supplies scalable wet processing equipment, including advanced Single Wafer Cleaning Systems, engineered to enhance SiC process control and optimize GaN substrate yield without compromising sensitive substrate topographies.

ICP-MS Trace Validation

Analytical chemical verification for our semiconductor-wet-bench-systems guarantees compliance with sub-ppb cleanliness and particle control targets.

Corrosion Resistance

High-purity fluoropolymer fluid pathways maintain total reagent integrity in aggressive acid and solvent processes.

KOSEN SEMI SiC Process Control and GaN Substrate Yield Systems

Enhance GaN Substrate Yield & SiC Process Control

Consult with KOSEN SEMI process specialists to deploy certified wet cleaning and etching solutions in your fab.

KOSEN SEMI Compound Semiconductor Solutions化合物衬底湿法处理 - 标签页化合物衬底湿法处理 - 标签页
KOSEN SEMI Process Intelligence

Tailored Wet Processing Across Compound Substrate Chemistries

Compound semiconductor substrates—ranging from wide-bandgap Silicon Carbide and Gallium Nitride to fragile III-V materials—present unique lattice structures, chemical inertness, and thermal boundaries that standard silicon wet processing tools cannot accommodate. KOSEN SEMI delivers dedicated compound semiconductor equipment and automated wet processing platforms engineered specifically for advanced SiC, GaN, and III-V wafer manufacturing.

By integrating multi-frequency megasonic wafer cleaning equipment, sustained high-temperature chemical loops, and custom fluid dynamics, our single wafer processing and batch platforms prevent lattice damage, control 200 nm-class defectivity, with optimized capability down to 100 nm, and deliver quantifiable yield optimization across power, RF, and optoelectronic device fabrication lines.

Silicon Carbide (SiC) Wafer Processing Solutions

Silicon Carbide substrates exhibit extreme mechanical hardness and chemical inertness, requiring aggressive chemistries at elevated temperatures combined with high-impact physical agitation to achieve 200 nm-class cleanliness, with optimized capability down to 100 nm after wire sawing, grinding, and CMP. KOSEN SEMI platforms incorporate full fluoropolymer fluidics and sustained high-temperature thermal loops engineered specifically for rigorous SiC process control in 150mm and 200mm production lines.

Core Capability Highlights

  • Sliced Wafer Post-Grinding Cleaning: Removes sub-surface damage particles, wire-saw slurry residue, and heavy oils through multi-frequency megasonic bath agitation and targeted acoustic action.

  • Substrate Thinning Residue Removal: Employs recirculating high-temperature SPM and SPRM chemical baths up to 180°C to dissolve tough organic contaminants without pitting the underlying SiC crystal lattice.

  • High-Hardness Surface Passivation: Prepares inert 4H-SiC and 6H-SiC wafer surfaces for homoepitaxial growth with surface micro-roughness strictly controlled under 0.1 nm RMS standards.

Silicon Carbide wafer cleaning
SiC Process Target 100 nm Particle Control under Optimized Conditions | 180°C Chemical Resistance

Thermal Management and Custom Fluid Dynamics Engineering

Substrate Physics and Chemical Dynamics

Mastering specialized chemistries in SiC and GaN manufacturing demands custom hardware engineering that addresses differing crystal lattice constants and thermal expansion boundaries. Standard silicon wafer processing relies on ambient or low-temperature chemical baths. In contrast, Silicon Carbide processing requires aggressive chemical mixtures operating near boiling thresholds. KOSEN SEMI platforms incorporate dual-walled PTFE heating tanks with inline infrared temperature monitoring to maintain bath stability up to 180°C.

Conversely, fragile III-V compound semiconductor materials like GaAs and InP exhibit extreme chemical vulnerability and mechanical brittleness. Uncontrolled fluid turbulence or rapid temperature shifts can induce micro-cracking or layer delamination. Our automated chemical delivery systems balance thermal ramps with precise fluid velocity profiling to eliminate thermal shock risks during critical chemical transitions.

Optimized Flow Control Across Substrate Chemistries

Fluid recirculation and particle filtration dynamics are explicitly configured for each substrate family. In GaN epitaxial wafer processing, organic metal-organic chemical vapor deposition (MOCVD) byproducts require high-turnover chemical recirculation loops with sub-0.05 μm fluoropolymer filter membranes. This prevents particle re-deposition during extended immersion and spray cleaning cycles.

By combining real-time chemical concentration analysis with automated dosing units, KOSEN SEMI platforms ensure consistent chemical activity across thousands of processing cycles. This multi-material versatility grants semiconductor fabs dependable process repeatability tailored directly to their compound wafer roadmap.

Process ParameterSilicon Carbide (SiC)Gallium Nitride (GaN)GaAs and InP Compounds
Primary Chemical EnvironmentHigh-Temp SPM, SPRM, Concentrated HFSelective Acid/Base Strippers, SC-1, SC-2Solvent Lift-Off Chemistries, Dilute Mineral Acids
Operating Temperature WindowUp to 180°C Continuous40°C to 90°C RegulatedAmbient to 65°C Precise
Fluid Mechanics ProfileHigh-Impact Cavitation MegasonicsControlled Boundary-Layer Laminar FlowLow-Shear Soft Spray & Marangoni Vapor
Defectivity & Cleanliness TargetParticle & Organic Removal down to 100 nm under optimized conditionsSub-ppm Metal Removal (ICP-MS Validated)Controlled Metal Residue & Feature Protection

Require Customized Chemical Bath Configurations for Your Substrate?

KOSEN SEMI process engineers evaluate your specific wafer crystal parameters, slurry chemistry, and throughput requirements to build custom compound semiconductor solutions.

KOSEN SEMI Wet Process Architecture

Automated Architecture & Chemical Delivery Systems

Engineered specifically for harsh compound semiconductor wet processing, combining fully sealed fluoropolymer containment with high-precision chemical delivery and single wafer cleaning systems capabilities.

KOSEN SEMI Automated Chemical Delivery System Architecture Diagram
Interactive Architecture Schematic
01

Anti-Corrosive Fluoropolymer Hardware

Fully enclosed PFA and PTFE linings isolate aggressive high-temperature chemistry, maximizing equipment life in demanding SiC/GaN fab manufacturing environments.

02

Automated Chemical Delivery System

Real-time inline concentration analysis triggers precise chemical re-dosing, preventing bath drift and ensuring etch rate consistency.

03

Single Wafer Processing & SECS/GEM

Automated robotic transport delivers gentle, repeatable single wafer processing while interfacing seamlessly with host SECS/GEM MES.

Architecture Technical Specifications

System Module Material & Design Spec Automation Protocol Compound Semi Advantage
Cabinet Enclosure PFA and PTFE fluoropolymer linings Sealed anti-leak vapor containment Protects fab equipment from hot acid vapors
Chemical Delivery System High-purity fluoropolymer manifolds & sensors Closed-loop real-time concentration analysis Eliminates process bath chemical drift
Single Wafer Transport ISO Class 5–7 cleanroom compatible robotic arm SECS/GEM factory integration standard Ensures high-throughput, operator-free processing
Safety & Fluid Control Dual-contained chemical supply line network Automated emergency shutdown & line purging Prevents chemical leaks and contamination

Upgrade Your Cleanroom Chemical Delivery Architecture

Consult with KOSEN SEMI engineers to customize PFA/PTFE chemical delivery systems and integrated wafer cleaning systems tailored to your fab requirements.

Advanced Compound Semiconductor Solutions

Precision Wet Etching & Cleaning Systems for Compound Wafer Processing

High-yield chemical surface preparation engineered specifically for SiC, GaN, GaAs, and InP microelectronics, optical devices, and high-power RF applications.

99.8%

Wafer Metal Removal Rate

Trace surface metallic contamination eliminated and validated via ICP-MS analysis protocols.

±1.5%

Etch Uniformity Precision

Tight boundary layer control supporting ultra-thin SiC, GaN, and III-V active films.

Zero

Unplanned Chemical Downtime

Continuous continuous-duty delivery in high-purity hot acid and aggressive solvent environments.

100+

Fab Line Deployments

Production-proven automated tools running in active 150mm and 200mm global foundries.

Frequently Asked Questions

Addressing key technical and operational questions regarding KOSEN SEMI compound wafer wet processing equipment.

Compound Semiconductor Process Support

Consult KOSEN SEMI Engineers for Custom Wet Processing Solutions

Share your SiC, GaN, GaAs, or InP wafer requirements with our engineering team. We provide customized recommendations for cleaning, etching, chemical compatibility, and equipment configuration.

Process Evaluation Equipment Matching Technical Consultation
Process Knowledge and Technical Insights

Frequently Asked Questions

Overcoming Compound Substrate Processing Challenges

Manufacturing wide-bandgap compound semiconductors like SiC, GaN, and III-V substrates presents extreme wet processing challenges. High thermal thresholds, aggressive acid chemistries, and stringent defect density limits demand highly specialized equipment architectures. KOSEN SEMI delivers field-proven wet bench and Single Wafer Cleaning Systems engineered to withstand harsh chemical environments, optimize yield, and resolve critical production bottlenecks.

Does the platform support both single-wafer processing and batch wet bench configurations?

Yes. KOSEN SEMI manufactures both single-wafer processing modules and automated full-batch wet benches tailored for compound semiconductor manufacturing. Single-wafer platforms excel at ultra-precise surface cleaning, high-selectivity thin-film etching, and delicate pattern protection where cross-contamination must be strictly eliminated. Automated batch wet benches deliver maximum wafer throughput for high-volume substrate production, post-grinding damage removal, and bulk strip operations.

  • Single-wafer precision: Dedicated fluid control for sensitive epitaxy layers, ultra-thin films, and fine-pitch device architectures.
  • High-throughput batch benches: Optimized carrier kinematics and multi-tank sequencing engineered for high-volume fab lines.
  • Modular integration: Shared chemical delivery infrastructure, controls, and safety frameworks across both tool styles.

How are tool longevity and maintenance managed in high-temperature acid environments?

KOSEN SEMI wet processing tools utilize high-purity fluoropolymers (PTFE/PFA) across all chemical wetted pathways and processing tanks. Continuous nitrogen gas-purge sealing creates positive-pressure barriers around electrical actuators, mechanical joints, and structural enclosures. This robust architecture resists aggressive sulfuric acid and hydrogen peroxide (SPM/SPRM) mixtures running at temperatures up to 180°C, extending component lifespan and lowering cost of ownership.

  • 300% longer life: High-grade fluoropolymer construction prevents chemical oxidation, stress cracking, and material degradation.
  • N2 gas-purge isolation: Positive-pressure vapor barriers seal driving mechanisms away from corrosive acid fumes.
  • Thermal stability: Advanced bath heating and circulation prevent thermal shock and maintain uniform temperature gradients.

Can fluid delivery systems and manifolds be customized for proprietary chemistry blends?

Absolutely. KOSEN SEMI process engineers custom-design chemical delivery manifolds, auto-dosing units, and drainage plumbing tailored precisely to your fab's proprietary chemical formulations and safety protocols. Integrated closed-loop chemical reclaim systems achieve dynamic recovery rates exceeding 90 percent, significantly reducing raw material consumption and hazardous waste treatment costs.

  • Real-time auto-dosing: Online concentration sensors trigger precise replenishment to preserve bath chemical equilibrium.
  • Closed-loop reclaim: Dynamic chemical recycling (>90% recovery) minimizes chemical expense and waste handling.
  • Segregated plumbing: Dedicated drain separation prevents unintended chemical mixing and maintains strict safety standards.

Are KOSEN SEMI wet processing tools certified for ISO Class 5–7 cleanrooms and SECS/GEM automation?

Yes. All KOSEN SEMI compound semiconductor wet processing platforms meet ISO Class 5–7 cleanroom standards. Systems come standard with fully compliant SECS/GEM communication protocols, enabling seamless integration with Manufacturing Execution Systems (MES) for automated recipe downloading, data logging, and real-time process monitoring. Fully automated robotic wafer handling eliminates operator contamination and micro-fracture risks.

  • ISO Class 5–7 compliance: High-efficiency particle filtration and enclosed laminar flow maintain ultra-clean operation.
  • Native SECS/GEM integration: Full software compliance supports automated recipe management and MES tracking.
  • Precision robotic transfer: Gentle end-effector kinematics prevent mechanical stress and edge chipping on SiC/GaN wafers.

How do these wet processing platforms optimize yield and eliminate defects on SiC and GaN substrates?

Compound substrate fabrication demands 200 nm-class particle removal, with optimized capability down to 100 nm and rigorous metallic contamination control. KOSEN SEMI platforms incorporate multi-frequency megasonic transducers and watermark-free IPA Marangoni drying. Rigorous testing validates a 99.8 percent metal contamination removal rate and tight etch uniformity within ±1.5 percent across wide-bandgap wafer surfaces.

  • 200 nm-Class Particle Removal: Advanced megasonic agitation dislodges particles down to 100 nm under optimized conditions without damaging delicate features.
  • IPA Marangoni drying: Surface-tension-driven drying eliminates watermarks and residue stains on sensitive micro-patterns.
  • High etch uniformity: Closed-loop chemical thermal control yields precise thin-film etching tolerances within ±1.5%.
KOSEN SEMI compound semiconductor wet processing equipment schematic

Engineering Specifications and Standards

KOSEN SEMI wet processing systems for compound semiconductor fabs are certified to meet rigorous global semiconductor standards.

Parameter Specification
Cleanroom Rating ISO Class 5–7
Max Acid Temp Up to 180°C (SPM/SPRM)
Chemical Reclaim 90% dynamic recovery
Automation Full SECS and GEM interface
Particle Limit 100 nm under optimized conditions particle control

Direct Engineer Consultation

Need detailed chemical compatibility matrixes or custom tool footprint layouts? Our process team provides tailored technical evaluations within 24 hours.

Fab Deployment Support

Over 100 KOSEN SEMI compound semiconductor wet processing modules are actively deployed in high-volume manufacturing fabs worldwide.

Validated for Silicon Carbide (SiC), Gallium Nitride (GaN), and III-V substrate production processes.
KOSEN SEMI Process Engineering

Ready to Maximize Your Compound Wafer Yield and Process Stability?

Submit your substrate parameters (SiC, GaN, III-V) and target specifications. Our engineering team will evaluate your clean, etch, or strip requirements using our advanced Single Wafer Cleaning Systems to deliver a customized wet processing evaluation report within 24 hours.

24-Hour Evaluation

Receive comprehensive technical reports with chemical recipe and throughput recommendations.

Tailored Solutions

Fully optimized custom compound semiconductor solutions for SiC, GaN, GaAs, and InP fabbing.

Trust Commitment

100% Data Confidentiality Guaranteed. Strict NDA Compliance & IP Security.

KOSEN SEMI process engineer evaluating custom compound semiconductor equipment

Consult a Process Engineer

Connect with our team to learn more about our Engineering Capability and design custom compound semiconductor solutions tailored to your fab requirements.

100% Data Confidentiality Guaranteed. Strict NDA Compliance.
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